Temat: ultra low power - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A 400 fJ per-cycle frequency reference for internet of things
Autorzy:: Coustans, M.
Krummenacher, F.
Terrier, C.
Kayal, M.
Powiązania:: https://bibliotekanauki.pl/articles/397716.pdf
Data publikacji:: 2016
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: time reference
supply voltage insensitivity
temperature insensitivity
ultra-low power
always on domain optimization
odniesienie czasowe
napięcie zasilające
ultra low power
Opis:: This work presents an ultra-low power oscillator designed to target different contexts, such as crystal-assisted timekeeping, reference oscillator to optimize the always on domain of a microcontroller or wake-up timer. This oscillator enables ultralow power operation in 0.18 μm CMOS technology; the core oscillator consumes 2.5 nW at room temperature, with a temperature stability of 14 ppm/°C [-40°C - 60°C] and 0.07 %/V supply sensitivity.
Źródło:: International Journal of Microelectronics and Computer Science; 2016, 7, 2; 41-46
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Advanced compact modeling of the deep submicron technologies
Autorzy:: Grabiński, W.
Bucher, M.
Sallese, J.-M.
Krummenacher, F.
Powiązania:: https://bibliotekanauki.pl/articles/309312.pdf
Data publikacji:: 2000
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultra deep submicron (UDSM) technology
compact modeling
EKV MOS transistor model
MOSFET
matching
low power
RF applications
Opis:: The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 žm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model
Źródło:: Journal of Telecommunications and Information Technology; 2000, 3-4; 31-42
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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