Temat: RE - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Optical Nonlinearities in PbSe Nanocrystals
Autorzy:: Aleksejenko, G.
Pačebutas, V.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/1179709.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Jg
42.70.Mp
42.65.Re
Opis:: The linear and nonlinear optical response of colloidal PbSe nanocrystals was investigated. Optical nonlinearity and its recovery dynamics in this system was measured and compared with other available experimental data. The saturation irradiance value for the bleaching effect and absorption cross-section were determined.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 294-297
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications
Autorzy:: Adomavičius, R.
Balakauskas, S.
Bertulis, K.
Geižutis, A.
Molis, G.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041645.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
Opis:: Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 128-131
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Terahertz Emission from Narrow Gap Semiconductors Photoexcited by Femtosecond Laser Pulses
Autorzy:: Adomavičius, R.
Urbanowicz, A.
Molis, G.
Krotkus, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041649.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
72.30.+q
Opis:: Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping levels of approximately 10$\text{}^{16}$-10$\text{}^{17}$ cm$\text{}^{-3}$. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 132-136
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:: Šustavičiūtė, R.
Balakauskas, S.
Adomavičius, R.
Krotkus, A.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/2047687.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.+p
75.50.Pp
Opis:: An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 311-314
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors
Autorzy:: Adomavičius, R.
Krotkus, A.
Molis, G.
Urbanowicz, A.
Malevich, V.
Powiązania:: https://bibliotekanauki.pl/articles/1813200.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.65.Re
07.57.Hm
78.47.-p
72.30.+q
Opis:: THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 859-862
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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