- Tytuł:
- SiGe HBT wideband amplifier for millimeter wave applications
- Autorzy:
-
Krcmar, M.
Noether, N.
Boeck, G. - Powiązania:
- https://bibliotekanauki.pl/articles/307582.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
wideband amplifier
HBT
SiGe
millimeter wave
bipolar integrated circuits - Opis:
- A wideband amplifier up to 50 GHz has been implemented in a 0.25 žm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 1; 8-12
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł