Autor: Osinniy, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
Autorzy:: Pietrzyk, M. A.
Kowalski, B. J.
Orłowski, B. A.
Knoff, W.
Osinniy, V.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2047678.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Mq
Opis:: We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 275-281
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
Autorzy:: Kowalik, I. A.
Guziewicz, E.
Kopalko, K.
Yatsunenko, S.
Godlewski, M.
Wójcik, A.
Osinniy, V.
Krajewski, T.
Story, T.
Łusakowska, E.
Paszkowicz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2047710.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
78.66.Hf
81.15.Kk
Opis:: ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 401-406
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
Autorzy:: Orlowski, B. A.
Kowalski, B. J.
Dziawa, P.
Pietrzyk, M.
Mickievicius, S.
Osinniy, V.
Taliashvili, B.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2044511.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Mq
Opis:: Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 803-807
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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