Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Borysiuk, K." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-5 z 5
    Tytuł:
    Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier
    Autorzy:
    Słupiński, T.
    Korona, K.
    Papierska, J.
    Borysiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398581.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.22.-f
    78.47.jd
    Opis:
    We report on molecular beam epitaxy growth and properties of rarely studied quaternary In_{0.4}(Al_{0.75}Ga_{0.25})_{0.6}As self-assembled quantum dots, which show strong and efficient emission of red light from single quantum dots. The increased yield is, among others, due to efficient energy transfer from indirect band-gap Al_{0.75}Ga_{0.25}As barriers. To maximize photon energy emitted from quantum dots, low In composition, x_{In} = 0.4 was applied, which also lowered the lattice misfit close to the limit of 2D/3D transition in the Stranski-Krastanov growth mode. Time-resolved micro-photoluminescence shows emission at 650-750 nm. Well-resolved single quantum dot photoluminescence lines (decay time of ≈ 1-2 ns) are observed despite a high concentration ≈ 3×10¹¹ cm¯² of quantum dots. We discuss this observation assuming newly a role of carriers or excitons diffusion/tunneling between quantum dots at high surface concentration of dots and a possible role of lattice disorder inside the dot on the exciton lifetime.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1229-1232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Absorption and Emission Properties of Light Emitting Diode Structures Containing GaInN/GaN QWs
    Autorzy:
    Binder, J.
    Korona, K.
    Borysiuk, J.
    Wysmołek, A.
    Baeumler, M.
    Köhler, K.
    Kirste, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492933.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    72.40.+w
    73.61.Ey
    Opis:
    In this work we present measurements of GaInN/GaN light emitting diodes (LEDs) with an active layer consisting of three quantum wells made of $Ga_{0.9}In_{0.10}N$ that have different widths (1.8 nm, 2.7 nm, 3.7 nm). A comparison of emission and absorption (photocurrent) on the same sample revealed a shift in energy, with the emission energy being significantly lower. The shifts are about 0.02 eV, 0.03 eV, and 0.04 eV for the quantum wells having the widths of 1.8 nm, 2.7 nm, and 3.7 nm, respectively. This can be explained by a shift of the ground state energy caused by the quantum confined Stark effect. Calculations show that due to the spontaneous polarization and the piezoelectric effect a strong electric field of the order of 1 MV/cm was present in the GaInN quantum wells. Simulations of ground-state energies in the model of an infinite square well under the influence of an electric field with a matched effective well width were performed and used to interpret the experimental results.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 918-920
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Dynamics of GaN/Si Nanowires
    Autorzy:
    Korona, K.
    Zytkiewicz, Z.
    Perkowska, P.
    Borysiuk, J.
    Binder, J.
    Sobanska, M.
    Klosek, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403621.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.22.-f
    78.47.jd
    Opis:
    In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes $n^2$ (Langevin) term and describes well the non-exponential dynamics of the excitonic band.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1001-1003
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas
    Autorzy:
    Korona, K.
    Drabińska, A.
    Surowiecka, K.
    Wołowiec, L.
    Borysiuk, J.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811946.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    78.55.Cr
    72.40.+w
    Opis:
    We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1179-1186
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
    Autorzy:
    Grodecki, K.
    Drabińska, A.
    Bożek, R.
    Wysmołek, A.
    Korona, K.
    Strupiński, W.
    Borysiuk, J.
    Stępniewski, R.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791292.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Tr
    78.40.Ri
    78.30.Na
    63.20.dd
    63.20.kd
    Opis:
    Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 835-837
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies