Autor: Kopyt, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: FDTD modeling and experimental verification of electromagnetic power dissipated in domestic microwave ovens
Autorzy:: Kopyt, P.
Celuch-Marcysiak, M.
Powiązania:: https://bibliotekanauki.pl/articles/309259.pdf
Data publikacji:: 2003
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: symulacja elektromagnetyczna
algorytm FDTD
nagrzewanie mikrofalowe
electromagnetic simulations
FDTD algorithm
microwave heating
Opis:: The FDTD (Finite Difference Time Domain) method has proven to be effective in modeling high-frequency electromagnetic problems in telecommunications industry. Recently it has been successfully applied in microwave power engineering. In order to accurately model scenarios typical in this field one has to deal with the movement of objects placed inside cavities. This paper describes a simple algorithm that makes it possible to take into account object rotation - important in simulations of domestic microwave ovens. Results of example simulations are presented and an experimental verification of the simulation tool is performed.
Źródło:: Journal of Telecommunications and Information Technology; 2003, 1; 59-65
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Sub-Terahertz Emission from Field-Effect Transistors
Autorzy:: Yavorskiy, D.
Karpierz, K.
Kopyt, P.
Grynberg, M.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033125.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: Field-effect transistors
THz emission
Opis:: Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 335-337
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
Autorzy:: Kucharski, K.
Zagrajek, P.
Tomaszewski, D.
Panas, A.
Głuszko, G.
Marczewski, J.
Kopyt, P.
Powiązania:: https://bibliotekanauki.pl/articles/1186027.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.Tv
85.60.Gz
42.79.Pw
Opis:: Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1193-1195
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Development of the NMOS-based THz detectors and the readout systems for THz spectroscopy and imaging
Autorzy:: Kołaciński, C.
Obrębski, D.
Marczewski, J.
Zbieć, M.
Kucharski, K.
Zagrajek, P.
Kopyt, P.
Powiązania:: https://bibliotekanauki.pl/articles/397805.pdf
Data publikacji:: 2017
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: NMOS-based terahertz detector
readout system
detektor terahercowy
obwód odczytujący
Opis:: This paper summarizes the work performed within the Polish applied research project THzOnLine aiming at multipixel THz detectors based on selective NMOS transistors and its application in biology, medicine and security systems, completed in 2016. It starts with presentation of techniques applied for increasing the efficiency of THz detectors, i.e. used to maximize the output voltage yielded from NMOS-based detecting devices when exposed to a THz radiation. In the second part of this work the authors focuse on issues related to development of the readout electronics for these devices, as well as present the collection of integrated circuits and two complete measurement systems constructed by them.
Źródło:: International Journal of Microelectronics and Computer Science; 2017, 8, 3; 101-109
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

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