Autor: Karczewski, J.K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Epitaxial Growths of II-VI Compounds on (110) Substrates
Autorzy:: Cywiński, G.
Wojtowicz, T.
Kopalko, K.
Karczewski, G.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1969044.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.-a
Opis:: We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 281-284
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Temperature Study of Photoluminescence from Deep CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Quantum Wells
Autorzy:: Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Kopalko, K.
Zakrzewski, A. K.
Janik, E.
Grasza, K.
Łusakowska, E.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1876361.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Dx
78.55.Et
Opis:: The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 500-504
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
Autorzy:: Godlewski, M.
Kopalko, K.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1952470.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.35.+z
78.47.+p
78.55.Et
Opis:: Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1012-1016
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Digital Magnetic Quantum Wells for the Study of Interface Sharpness of Molecular Beam Epitaxy Grown Structures
Autorzy:: Wojtowicz, T.
Karczewski, G.
Żakrzewski, A.
Kutrowski, M.
Janik, E.
Dynowska, E.
Kopalko, K.
Kret, S.
Kossut, J.
Laval, J. Y.
Powiązania:: https://bibliotekanauki.pl/articles/1931933.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Dx
78.55.Et
Opis:: We report on the growth and basic characterization of digital magnetic quantum wells, that is, quantum wells in which the well material is itself a short period superlattice composed of alternating diluted magnetic and nonmagnetic semiconductor layers each only a few monolayers thick. These novel structures can be useful in a variety of studies, including studies of barrier-well interface sharpness.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 165-168
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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