- Tytuł:
- Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
- Autorzy:
-
Bieniek, T.
Beck, R. B.
Jakubowski, A.
Konarski, P.
Ćwil, M.
Hoffman, P.
Schmeißer, D. - Powiązania:
- https://bibliotekanauki.pl/articles/308689.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
CMOS
gate stack
oxynitride
plasma implantation - Opis:
- Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 9-15
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł