Autor: Karwat, C. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Effect of Thermal Treatment on the Structure and Mechanical Properties of Coatings Based on (Ti, Hf, Nb, Si)N
Autorzy:: Pogrebnjak, A.
Komarov, F.
Sobol, O.
Kaverina, A.
Shypylenko, A.
Karwat, C.
Powiązania:: https://bibliotekanauki.pl/articles/1198976.pdf
Data publikacji:: 2014-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.-w
62.20.Qp
62.25.-g
Opis:: Current paper presents the results of investigating of nanostructured cathode arc vacuum evaporation coatings, based on (Ti, Hf, Nb, Si)N. Several methods of the structural and elemental analysis were used: proton microbeam, nano- and micro-electron beam, X-ray diffraction analysis. To determine tribological properties (scratch resistance, adhesive and cohesive strength) of the coatings, scratch testing were conducting. Influence of thermal annealing at temperatures 300, 500, 800, 1000C on elemental composition, microstructure, residual stress, phase composition, profiles of atomic distribution in the coatings were investigated.
Źródło:: Acta Physica Polonica A; 2014, 125, 6; 1312-1315
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B.
Wesch, W.
Wendler, E.
Karwat, C.
Powiązania:: https://bibliotekanauki.pl/articles/1503945.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:: We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 87-90
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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