Autor: Słupinski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions
Autorzy:: Gietka, K.
Kobak, J.
Rousset, J.
Janik, E.
Słupiński, T.
Kossacki, P.
Golnik, A.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1403652.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
81.07.Ta
78.67.Hc
75.50.Pp
75.75.Cd
75.30.Hx
Opis:: We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots. Manganese concentration was calibrated using magneto-reflectivity measurements and the giant Zeeman effect in (Cd,Mn)Te and (Zn,Mn)Te layers. Successful incorporation of Mn in the CdTe/ZnTe quantum dots was confirmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, p-d exchange interaction.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1056-1058
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots
Autorzy:: Rousset, J.
Słupinski, T.
Jakubczyk, T.
Kobak, J.
Stawicki, P.
Gołasa, K.
Babinski, A.
Nawrocki, M.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1403611.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ci
78.67.Pt
68.37.Hk
Opis:: We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 984-987
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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