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Wyświetlanie 1-8 z 8
Tytuł:
Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors
Autorzy:
Knap, W.
Łusakowski, J.
Teppe, F.
Dyakonova, N.
Meziani, Y.
Powiązania:
https://bibliotekanauki.pl/articles/2041635.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.-b
73.23.-b
Opis:
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 82-91
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors
Autorzy:
Teppe, F.
El Fatimy, A.
Boubanga, S.
Knap, W.
Seliuta, D.
Valusis, G.
Chenaud, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813191.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
71.45.Lr
72.30.+q
Opis:
The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the THz range for a sufficiently short gate length field effect transistors. A variety of possible applications of field effect transistor operating as a THz device were suggested. In particular, it was shown that the nonlinear properties of plasma oscillations can be utilized for THz tunable detectors. During the last few years THz detection related to plasma wave instabilities in nanometer size field effect transistors was demonstrated experimentally. In this work we review our recent experimental results on the resonant plasma wave detection at cryogenic and room temperatures.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 815-820
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:
Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:
Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
Autorzy:
Videlier, H.
Dyakonova, N.
Teppe, F.
Consejo, C.
Chenaud, B.
Knap, W.
Lusakowski, J.
Tomaszewski, D.
Marczewski, J.
Grabiec, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492958.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 927-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
Autorzy:
But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T.
Powiązania:
https://bibliotekanauki.pl/articles/1409591.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
85.30.Tv
73.43.Qt
Opis:
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Weak Antilocalization in Quantum Wells
Autorzy:
Knap, W.
Skierbiszewski, C.
Litwin-Staszewska, E.
Kobbi, F.
Zduniak, A.
Robert, J.
Pikus, G.
Iordanskii, S.
Mosser, V.
Zekentes, K.
Powiązania:
https://bibliotekanauki.pl/articles/1873111.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Lh
73.20.Fz
72.15.Rn
Opis:
Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak antilocalization corrections to the conductivity in GaInAs quantum wells. Consistent quantitative (up to order of magnitude) description of weak antilocalization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relaxation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 427-432
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors
Autorzy:
Dyakonova, N.
El Fatimy, A.
Meziani, Y.
Coquillat, D.
Knap, W.
Teppe, F.
Buzatu, P.
Diforte-Poisson, M.
Dua, C.
Piotrowicz, S.
Morvan, E.
Delage, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492956.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 924-926
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors
Autorzy:
Teppe, F.
Consejo, C.
Torres, J.
Chenaud, B.
Solignac, P.
Fathololoumi, S.
Wasilewski, Z.
Zholudev, M.
Dyakonova, N.
Coquillat, D.
El Fatimy, A.
Buzatu, P.
Chaubet, C.
Knap, W.
Powiązania:
https://bibliotekanauki.pl/articles/1492959.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
07.57.Kp
52.35.-g
Opis:
We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 930-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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