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Wyszukujesz frazę "Yoon, C." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Evaluation of an Incentive-Based Obesity Management Program in a Workplace
Autorzy:
Hwang, G.
Yoon, C.
Jung, H.
Kim, Y.
Powiązania:
https://bibliotekanauki.pl/articles/90493.pdf
Data publikacji:
2011
Wydawca:
Centralny Instytut Ochrony Pracy
Tematy:
obesity
workplace
incentive
BMI
Opis:
This study is to analyze the effectiveness of an incentive-based obesity management program (the Midas Project aimed to improve good health habits) at an electronics company in 2005. A total of 95 company participants with a high body mass index (BMI) were recruited for a health promotion program for 3 months that awarded gold medals as an incentive for body fat loss. BMI decreased from 28.8 to 27.8 kg/m² (p = .000), body weight decreased from 87.2 to 83.5 kg (p = .000), and body fat weight decreased from 25.4 to 23.3 kg (p = .000). Systolic and diastolic blood pressure decreased from 130.5 to 125.1 mmHg (p = .002), from 86.4 to 81.7 mmHg (p = .009). The percentage of participants exercising more than 3 times per week increased from 27.3 to 52.3% (p = .000). The percentage who avoided overeating at parties and midnight eating increased from 65.9 to 72.7% (p = .767) and 70.5 to 84.1% (p = .172), respectively. This incentive-based obesity management program was effective in improving not only BMI but also health status.
Źródło:
International Journal of Occupational Safety and Ergonomics; 2011, 17, 2; 147-154
1080-3548
Pojawia się w:
International Journal of Occupational Safety and Ergonomics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure
Autorzy:
Lee, S.
Kim, J.
Yoon, S.
Kim, Y.
Honsberg, C.
Powiązania:
https://bibliotekanauki.pl/articles/1398577.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.40.-q
73.40.Lq
73.50.Pz
Opis:
The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap $(E_{g})$ of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1213-1216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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