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Wyszukujesz frazę "Kim, J.Y." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
Autorzy:
Park, K.
Hakeem, D.
Kim, J.
Kim, Y.
Kim, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398243.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.55.Hx
78.55.Et
Opis:
The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 902-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure
Autorzy:
Lee, S.
Kim, J.
Yoon, S.
Kim, Y.
Honsberg, C.
Powiązania:
https://bibliotekanauki.pl/articles/1398577.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.40.-q
73.40.Lq
73.50.Pz
Opis:
The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap $(E_{g})$ of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1213-1216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Autorzy:
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, D.
Kim, M.
Kwon, Y.
Choe, J.
Kim, J.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1535820.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.37.Ps
78.55.Cr
78.67.Hc
Opis:
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Isotopic water separation using AGMD and VEMD
Autorzy:
Kim, J.
Park, S.
Kim, T.-S.
Jeong, D.-Y.
Ko, K.-H.
Powiązania:
https://bibliotekanauki.pl/articles/147314.pdf
Data publikacji:
2004
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
AGMD
VEMD
oxygen isotopes
PET
FDG
Opis:
The 18O isotopic water permeation and separation characteristics of a hydrophobic PTFE membrane using Air Gap Membrane Distillation (AGMD) and Vacuum Enhanced Membrane Distillation (VEMD) were investigated. Permeation fluxes were measured by weighing the collected membrane-permeated water vapor. 18O/16O of each water sample was analyzed by the Tunable Diode Laser Absorption Spectroscopy (TDLAS). We observed the effects of the air filled membrane pores and the temperature gradient applied to the membrane surfaces on the vapor permeation flux and the oxygen isotope separation for the first time. For both AGMD and VEMD, the permeation flux and the degree of 18O separation increased as the membrane interfacial temperature gradient increased. Even though, oxygen isotope separation and the permeation flux for VEMD is slightly higher than AGMD, the latter may be more efficient from the system's operational point of view.
Źródło:
Nukleonika; 2004, 49, 4; 137-142
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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