Autor: Łoś, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Localized states in nanocarbons
Autorzy:: Kempiński, W.
Kempiński, M.
Markowski, D.
Łoś, M.
Powiązania:: https://bibliotekanauki.pl/articles/148234.pdf
Data publikacji:: 2013
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: activated carbon fibers (ACF)
carbon nanotubes
electron paramagnetic resonance (EPR)
fullerenes
Opis:: Localization phenomenon is studied in different modern nanocarbon materials: pristine C60, C60-fullerides, carbon nanotubes and graphene-based structures in the form of activated carbon fibers built of quantum dot-like basic structural units. Two experimental methods are used to define the localization and population control of spins (charge carriers) in the nanocarbon materials – electron paramagnetic resonance (EPR) and direct current (d.c.) electrical conductivity measurements. Results are discussed in the frame of the possible applications of the aforementioned materials in the molecular electronics or spintronics.
Źródło:: Nukleonika; 2013, 58, 3; 371-373
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: EPR and Impedance Measurements of Graphene Oxide and Reduced Graphene Oxide
Autorzy:: Kempiński, M.
Łoś, S.
Florczak, P.
Kempiński, W.
Jurga, S.
Powiązania:: https://bibliotekanauki.pl/articles/1033701.pdf
Data publikacji:: 2017-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Vp
76.30.-v
Opis:: We report the observations of electron paramagnetic resonance and impedance measurements of graphene oxide and reduced graphene oxide performed in the wide temperature range in order to get insight into the electronic properties of graphene-based materials and the role of oxygen functionalities in the charge carrier transport phenomena. In such systems the strong spin localization, hopping charge carrier transport as well as the formation of adsorption layers are observed, all the phenomena changing significantly after the heavily oxidized graphene is reduced.
Źródło:: Acta Physica Polonica A; 2017, 132, 1; 81-85
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Superconductivity of $MgB_2$ Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate
Autorzy:: Trybuła, Z.
Kempiński, W.
Łoś, Sz.
Kaszyńska, K.
Trybuła, M.
Piekoszewski, J.
Werner, Z.
Barlak, M.
Powiązania:: https://bibliotekanauki.pl/articles/1536977.pdf
Data publikacji:: 2010-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.70.-b
74.78.-w
Opis:: The results of investigation of the $MgB_2$ layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%$H_2$ gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous $MgB_2$ layer and the resistivity for all samples fall down to zero below $T_{c}$. The transition temperature $T_{c}$ becomes higher with increasing annealing temperature: $T_{c}$=18 K (for annealing at $T_{A}$=673 K), $T_{c}$=20 K (for annealing at $T_{A}$=773 K), and $T_{c}$=27 K (for annealing at $T_{A}$=873 K).
Źródło:: Acta Physica Polonica A; 2010, 118, 2; 323-325
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: The Evolution of Superconducting Phase $MgB_x$
Autorzy:: Łoś, Sz.
Kempiński, W.
Piekara-Sady, L.
Andrzejewski, B.
Jurga, W.
Kaszyńska, K.
Piekoszewski, J.
Werner, Z.
Barlak, M.
Powiązania:: https://bibliotekanauki.pl/articles/1812318.pdf
Data publikacji:: 2008-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.70.-b
74.78.-w
Opis:: Thin layers of $MgB_x$ were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous $MgB_2$ film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing $Ar-4%H_2$ gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that $T_c$ becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.
Źródło:: Acta Physica Polonica A; 2008, 114, 1; 179-184
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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