Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Wójtowicz, Ł." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-9 z 9
    Tytuł:
    Stimulated and Laser Emission in CdZnTe/CdMnTe Double Quantum Well Heterostructures
    Autorzy:
    Kowalczyk, L.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933829.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    71.55.Gs
    Opis:
    Stimulated emission by optical excitation has been investigated in CdZnTe/CdMnTe quantum well heterostructures. Laser action has been achieved at 4.2 K and at 77 K with relatively low threshold values of the excitation intensity. Photοluminescence excitation spectra of the stimulated emission were obtained indicating that the optical gain involves exciton-exciton inelastic scattering.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 787-790
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
    Autorzy:
    Żakrzewski, A. K.
    Dobaczewski, L.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934051.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 961-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Identification of Optical Transitions from CdTe and CdMnTe Quantum Dots Embedded in ZnTe Nanowires
    Autorzy:
    Szymura, M.
    Kłopotowski, Ł.
    Wojnar, P.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399096.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Uh
    78.67.Hc
    Opis:
    We study photoluminescence properties of CdTe and CdMnTe quantum dots embedded in ZnTe nanowires. The nanowires were grown by molecular beam epitaxy, applying the vapor-liquid-solid growth mechanism. Linear polarization anisotropy measurements allow us to assess that the excitonic transitions originate from a single nanowire. We identify the optical transitions by comparing observed spectroscopic shifts with the universal emission pattern from the epitaxial CdTe dots. We support this identification by analyzing the photoluminescence intensity dependence on excitation power.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 824-826
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission SecondHarmonic Generation in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te at 1.064 µm
    Autorzy:
    Koziarska, B.
    Kowalczyk, L.
    Suchocki, A.
    Wojtowicz, T.
    Zakrzewski, A. K.
    Karczewski, G.
    Janik, E.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873081.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.65.Ky
    68.70.+w
    Opis:
    Second harmonic generation, created by nanosecond Nd : YAG laser pulses at 1.064 µm with relatively low intensity in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te bulk crystals and thin layers was measured in transmission geometry. The effect practically occurs in a very thin surface layer of the material and it is used as a relatively straightforward method of layer quality characterization. It is shown that the angular dependence of the second harmonic generation intensity in thin layers of CdTe with good crystallographic (and optical) quality agrees very well with the theory in contrary to the samples with some distortions from the ideal structure which exhibits large distortions from the theory.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 423-426
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spectroscopy of Indirect Excitons in Vertically Stacked CdTe Quantum Dot Structures
    Autorzy:
    Kukliński, K.
    Kłopotowski, Ł.
    Fronc, K.
    Wojnar, P.
    Wojciechowski, T.
    Czapkiewicz, M.
    Kossut, J.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492851.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    78.67.Hc
    32.60.+i
    Opis:
    We show that by means of an electric field we can tune the energy levels in vertical quantum dot pairs and study transitions related to recombination of direct and indirect excitons. With decreasing the reverse bias, we observe both the blue- and red-shifted indirect exciton transitions. Based on the band profile of our device, we conclude that the former corresponds to the recombination of the electron and hole localized in the top and the bottom dot, respectively and the latter is related to the recombination of the electron and hole localized in the bottom and the top dot, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 856-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature
    Autorzy:
    Kowalczyk, L.
    Fancey, S.
    Buller, G.
    Massa, J.
    Kutrowski, M.
    Janik, E.
    Karczewski, G.
    Wojtowicz, T.
    Zakrzewski, A.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1876908.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Hf
    78.47.+p
    78.55.Et
    Opis:
    Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd_{0.5}Mn_{0.5}Te single quantum well. The width of the investigated well was 100 A. The study was performed at room temperature. The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd_{0.85}Mn_{0.15}Te quantum wells. A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 508-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Properties of ZnO and ZnCdO Nanowires
    Autorzy:
    Zaleszczyk, W.
    Fronc, K.
    Aleszkiewicz, M.
    Paszkowicz, W.
    Wróbel, J.
    Dłużewski, P.
    Kret, S.
    Klepka, M.
    Kłopotowski, Ł.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047698.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    We report on the photoluminescence studies of ZnO and ZnCdO nanowires grown on SiO$\text{}_{2}$/Si substrates by low-pressure vapor phase synthesis. X-ray diffraction and transmission electron microscopy measurements show that the crystallographic structure of these ZnO and ZnCdO nanowires is of wurtzite-type with a high crystal perfection. Surface morphology of samples was determined by scanning electron microscopy and atomic force microscopy. The photoluminescence spectra of as-grown nanowires, nanowires extracted from the substrate and deposited onto Si wafer, and nanowires dispersed in ethanol by sonication were investigated at room temperature and compared to each other. The temperature dependence of the near band-gap photoluminescence emitted by the as-grown nanowires was also measured and analyzed.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 357-362
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Properties of ZnO Nanowires Grown on Ni Substrate
    Autorzy:
    Zaleszczyk, W.
    Fronc, K.
    Przeździecka, E.
    Janik, E.
    Czapkiewicz, M.
    Wróbel, J.
    Paszkowicz, W.
    Kłopotowski, Ł.
    Karczewski, G.
    Wojtowicz, T.
    Presz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812028.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    Photoluminescence studies of zinc oxide nanowires produced by a carbo-thermal method on a nickel foil substrate are reported. Two types of as-grown samples: the first - containing only buffer film, and the second - containing both zinc oxide nanowires and buffer film grown in the same technological process, were investigated by means of the temperature-dependent photoluminescence. X-ray diffraction measurements of buffer film show that it is polycrystalline and is composed from wurtzite-type ZnO (main phase) and includes minority phases: rock salt type (Ni,Zn)O and hexagonal C₃N₄. The shape of the apparently monocrystalline nanowires is characterized by hexagonal section matching with the expectations of the hexagonal ZnO structure. The presence of LO-phonon replicas in photoluminescence spectra for the second sample is used as an argument for confirmation that ZnO nanowires are single crystalline. The method of growth of ZnO nanowires on nickel oxide opens perspectives to produce $Zn_{1-x}Ni_{x}O$ diluted magnetic semiconductor nanowires.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1451-1456
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Properties of ZnMnTe Nanowires
    Autorzy:
    Zaleszczyk, W.
    Janik, E.
    Presz, A.
    Szuszkiewicz, W.
    Morhange, J. F.
    Dłużewski, P.
    Kret, S.
    Kirmse, H.
    Neumann, W.
    Dynowska, E.
    Domagała, J. Z.
    Caliebe, W.
    Aleszkiewicz, M.
    Pacuski, W.
    Golnik, A.
    Kossacki, P.
    Baczewski, L. T.
    Petroutchik, A.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047697.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.Df
    68.65.La
    78.55.Et
    78.67.Bf
    81.15.Hi
    Opis:
    Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies