- Tytuł:
- Identification of Residual Impurities in Si-Doped MBE Grown GaAs
- Autorzy:
-
Kaniewska, M.
Regiński, K.
Kaniewski, J.
Muszalski, J.
Ornoch, L.
Adamczewska, J.
Marczewski, J.
Bugajski, M.
Mizera, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1933820.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
73.40.Νs
73.20.Hb - Opis:
- The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 775-778
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł