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Wyszukujesz frazę "Twardowski, J." wg kryterium: Autor


Wyświetlanie 1-8 z 8
Tytuł:
MnAs Nanocrystals Embedded in GaAs
Autorzy:
Kwiatkowski, A.
Wasik, D.
Kamińska, M.
Twardowski, A.
Dłużewski, P.
Borysiuk, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811951.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.-g
75.75.+a
Opis:
Magnetic properties of MnAs nanocrystals embedded in GaAs are analyzed in the frame of phenomenological model proposed by Sasaki for ferritin superparamagnets. Our calculations explain qualitatively experimental data of magnetization versus temperature, obtained according to zero-field-cooled and field-cooled protocols. They show dynamics of magnetization of MnAs nanocrystals in range of temperature from 10 K to 320 K. There is transition from state in which very slow dynamics is observed (frozen state) to state in which dynamics is fast (quasi-superparamagnetic state).
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1207-1211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Nanocrystals Embedded in GaAs
Autorzy:
Kwiatkowski, A.
Borysiuk, J.
Bożek, R.
Wasik, D.
Kamińska, M.
Sadowski, J.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046925.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.+w
61.82.Fk
68.37.Rt
68.37.Lp
74.25.Ha
Opis:
We report on cross-sectional transmission electron microscopy and magnetic force microscopy studies performed on self-organized MnAs nanoclusters embedded in GaAs. It was found that 10÷20 nm large MnAs ferromagnetic nanocrystals were formed during rapid thermal annealing of Ga$\text{}_{1-x}$Mn$\text{}_{x}$As layers at 600ºC, leading to magnetic contrasts in magnetic force microscopy images.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Superconductivity in Highly Cr-Doped GaP Single Crystals
Autorzy:
Gosk, J. B.
Strzelecka, G.
Kowalski, G.
Hruban, A.
Kamińska, M.
Twardowski, A.
Gronkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046913.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.10.+v
75.50.Pp
61.72.Vv
61.72.Dd
81.10.Dn
Opis:
Studying bulk GaP, highly doped with Cr, and searching for possible ferromagnetic semiconductor in view of spintronic applications, we found superconducting behavior of this material unexpectedly. Magnetization techniques and X-ray diffraction were applied to study these crystals. Magnetization revealed superconducting features up to about 6 K and X-ray studies showed that superconductivity might be related to small size Cr precipitates.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 189-193
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals
Autorzy:
Gosk, J.
Zając, M.
Kamińska, M.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2036861.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
75.30.Gw
75.50.Pp
Opis:
Magnetic properties of bulk wurtzite n-type GaMnN and highly resistive GaMnN:Mg monocrystals were studied for the magnetic field applied parallel and perpendicular to the crystal hexagonal c-axis. Magnetization of both types of samples reveals paramagnetic behavior. However, for n-type GaMnN isotropic magnetization was observed which is in agreement with Mn d$\text{}^{5}$ configuration. On the other hand, GaMnN co-doped with Mg shows large magnetic anisotropy which suggests Mn to be in nonspherical d$\text{}^{4}$ or d$\text{}^{3}$ configuration.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 665-669
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mn Impurity in Bulk GaAs Crystals
Autorzy:
Pawłowski, M.
Piersa, M.
Wołoś, A.
Palczewska, M.
Strzelecka, G.
Hruban, A.
Gosk, J.
Kamińska, M.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2044520.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ee
75.50.Pp
76.30.Fc
Opis:
Magnetic and electron transport properties of GaAs:Mn crystals grown by Czochralski method were studied. Electron spin resonance showed the presence of Mn acceptor A in two charge states: singly ionized A$\text{}^{-}$ in the form of Mn$\text{}^{2+}$(d$\text{}^{5}$), and neutral A$\text{}^{0}$ in the form of Mn$\text{}^{2+}$(d$\text{}^{5}$) plus a bound hole (h). It was possible to determine the relative concentration of both types of centers from intensity of the corresponding electron spin resonance lines. Magnetization measured as a function of magnetic field (up to 6 T) in the temperature range of 2-300 K revealed overall paramagnetic behavior of the samples. Effective spin was found to be about 1.5 value, which was consistent with the presence of two types of Mn configurations. In most of the studied samples the dominance of Mn$\text{}^{2+}$(d$\text{}^{5}$)+h configuration was established and it increased after annealing of native donors. The total value of Mn content was obtained from fitting of magnetization curves with the use of parameters obtained from electron spin resonance. In electron transport, two mechanisms of conductivity were observed: valence band transport dominated above 70 K, and hopping conductivity within Mn impurity band at lower temperatures. From the analysis of the hopping conductivity and using the obtained values of the total Mn content, the effective radius of Mn acceptor in GaAs was estimated as a = 11±3Å.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 825-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoluminescence Studies of GaN:Fe
Autorzy:
Niedźwiadek, A.
Wysmołek, A.
Wasik, D.
Potemski, M.
Szczytko, J.
Kamińska, M.
Twardowski, A.
Łucznik, B.
Pastuszka, B.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2047373.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
71.55.Eq
71.20.Be
Opis:
We report on magneto-optical studies on iron doped GaN crystals grown using hydride vapor phase epitaxy method on bulk GaN substrate. The investigated samples showed an intensive 1.3 eV luminescence band, characteristic of Fe$\text{}^{3+}$(d$\text{}^{5}$) center in GaN. A high quality of the investigated samples allowed us to observe a well-resolved fine structure of intracenter transitions between $\text{}^{4}$T$\text{}_{1}$(G) and $\text{}^{6}$A$\text{}_{1}$(S) states, consisting of four sharp no-phonon lines. All the observed no-phonon lines showed pronounced splittings in magnetic field. From the analysis of the magneto-optical data, the structure of split $\text{}^{4}$T$\text{}_{1}$(G) multiplet in the magnetic field applied along c-axis of GaN crystals was established.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 177-182
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Measurement of Very Small Zeeman Splittings in GaN:Mn,Mg by Faraday Rotation
Autorzy:
Wołoś, A.
Kossacki, P.
Golnik, A.
Kamińska, M.
Gaj, J. A.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2035615.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
71.70.Ej
71.55.Eq
71.20.Nr
Opis:
In this work we demonstrate an application of Faraday rotation for measuring an extremely small Zeeman splitting of an Mn related absorption line placed at 1.417 eV in optical absorption spectrum of Mn and Mg doped gallium nitride. Analysis of the collected spectra allowed us to determine the value of the splitting as equal to 0.12±0.01 meV at 6 T. This data should help in establishing the nature of the observed absorption band.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 695-699
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Physical Properties of SiC-GaAs Nano-Composites
Autorzy:
Kalisz, G.
Grzanka, E.
Wasik, D.
Świderska-Środa, A.
Gierlotka, S.
Borysiuk, J.
Kamińska, M.
Twardowski, A.
Pałosz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2043724.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
07.35.+k
Opis:
Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 717-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

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