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    Wyświetlanie 1-7 z 7
    Tytuł:
    ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Kamińska, E.
    Wojciechowski, T.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/220412.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Wide band gap oxide semiconductors
    ZnO
    integrated optics structures
    planar waveguides
    Opis:
    The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 401-412
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
    Autorzy:
    Borysiewicz, M. A.
    Pasternak, I.
    Dynowska, E.
    Jakieła, R.
    Kolkovski, V.
    Dużyńska, A.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048109.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    61.05.cp
    68.37.Hk
    68.37.Ps
    68.49.Sf
    78.55.Et
    Opis:
    ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 686-688
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
    Autorzy:
    Taube, A.
    Kruszka, R.
    Borysiewicz, M.
    Gierałtowska, S.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492515.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.dj
    77.22.Ch
    73.40.Qv
    81.15.Gh
    81.15.Cd
    Opis:
    The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
    Autorzy:
    Borysiewicz, M.
    Wojciechowski, T.
    Dynowska, E.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198573.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.70.-m
    81.15.Cd
    77.55.hf
    81.10.Pq
    52.27.Cm
    Opis:
    Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1144-1148
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
    Autorzy:
    Borysiewicz, M.
    Kamińska, E.
    Piotrowska, A.
    Pasternak, I.
    Jakieła, R.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811915.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.49.Sf
    68.55.ag
    81.40.Ef
    Opis:
    Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1061-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Zinc Oxide Semiconductor for Photonics Structures Applications
    Autorzy:
    Struk, P.
    Pustelny, T.
    Pustelny, B.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Borysiewicz, M.
    Ekielski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506857.pdf
    Data publikacji:
    2010-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.70.-a
    42.82.-m
    68.35.Ct
    Opis:
    The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 6; 1242-1245
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Optical Waveguides for Application in Optoelectronic Gas Sensors
    Autorzy:
    Golaszewska, K.
    Kamińska, E.
    Pustelny, T.
    Struk, P.
    Piotrowski, T.
    Piotrowska, A.
    Ekielski, M.
    Kruszka, R.
    Wzorek, M.
    Borysiewicz, M.
    Pasternak, I.
    Gut, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811559.pdf
    Data publikacji:
    2008-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.82.Et
    07.07.Df
    42.79.Pw
    81.15.-z
    Opis:
    In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide $TiO_2$ and tin dioxide $SnO_2$ on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 6A; A-223-A-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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