- Tytuł:
- Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
- Autorzy:
-
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V. - Powiązania:
- https://bibliotekanauki.pl/articles/2035755.pdf
- Data publikacji:
- 2003-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.30.+q
73.61.Ey - Opis:
- Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
- Źródło:
-
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł