Autor: Baranowski, S - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure
Autorzy:: Leszczyński, M.
Grzegory, I.
Bockowski, M.
Jun, J.
Porowski, S.
Jasiński, J.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/1933847.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Dd
61.50.Cj
Opis:: Gallium nitride bulk crystals grown at about 15 kbar and 1500 K have been examined by using the high resolution X-ray diffractometry. An analysis of a set of the rocking curves of various Bragg reflections enabled us to estimate a dislocation density. For the crystals of dimensions lower than about 1 mm it is lower than 10$\text{}^{-5}$ cm$\text{}^{-2}$. For bigger samples the crystallographic quality worsens. With an application of the reciprocal lattice mapping we could distinguish between internal strains and mosaicity which are both present in these crystals The results for the bulk crystals are compared with those for epitaxial layers.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 799-802
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:: Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:: https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.55.Cr
Opis:: The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Teisseyre, H.
Suski, T.
Grzegory, I.
Boćkowski, M.
Jun, J.
Pałosz, B.
Porowski, S.
Pakuła, K.
Baranowski, J. M.
Barski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1952040.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ji
61.72.Vv
Opis:: Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 887-890
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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