Autor: Tomaszewski, B. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions
Autorzy:: Zaborowski, M.
Tomaszewski, D.
Jaroszewicz, B.
Grabiec, P.
Powiązania:: https://bibliotekanauki.pl/articles/308235.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: chlorine ion sensor
potentiometric sensor
p-n junction thermometer
Opis:: Three sensors for chemical and physical examination of aqueous solutions were presented in the paper. An Au potentiometric electrode, an AgCl chlorine ion sensor and a p-n junction thermometer were developed. Their layout and internal structure were explained in the light of the manufacturing process. The device characteristics were measured in conditions corresponding to normal operation of the devices. Basic electrical parameters of the developed structures, as well as their sensitivity to environmental parameter variation were estimated.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 4; 71-75
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electrical characterization of ISFETs
Autorzy:: Tomaszewski, D.
Yang, C. M.
Jaroszewicz, B.
Zaborowski, M.
Grabiec, P.
Pijanowska, D.
Powiązania:: https://bibliotekanauki.pl/articles/308663.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ISFET
CMOS
electrical measurements
I-V characteristics
characterization
parameters extraction
Opis:: Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 55-60
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
Autorzy:: Barański, M.
Domański, K.
Grabiec, P.
Grodner, M.
Jaroszewicz, B.
Kociubiński, A.
Kucewicz, W.
Kucharski, K.
Marczewski, J.
Niemiec, H.
Sapor, M.
Tomaszewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/308825.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI CMOS technology
pixel detector
test structure
Opis:: This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 85-93
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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