- Tytuł:
- Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry
- Autorzy:
-
Knoff, W.
Domukhovski, V.
Dybko, K.
Dziawa, P.
Górska, M.
Jakieła, R.
Łusakowska, E.
Taliashvili, B.
Story, T.
Reszka, A.
Anderson, J.
Rotundu, C. - Powiązania:
- https://bibliotekanauki.pl/articles/1811940.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 75.50.Pp
- Opis:
- Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in $Ge_{0.9}Mn_{0.1}Te$ layers from $T_c$=30 K (low Te flux) to $T_c$=42 K (high Te flux).
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1159-1165
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł