- Tytuł:
- The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films
- Autorzy:
- Ismael, M. M.
- Powiązania:
- https://bibliotekanauki.pl/articles/412157.pdf
- Data publikacji:
- 2013
- Wydawca:
- Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
- Tematy:
-
Glass assisted CO2 laser
Silicon substrate
SiOxNy Thin Film - Opis:
- Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1•cm-2 respectively.
- Źródło:
-
International Letters of Chemistry, Physics and Astronomy; 2013, 14; 1-9
2299-3843 - Pojawia się w:
- International Letters of Chemistry, Physics and Astronomy
- Dostawca treści:
- Biblioteka Nauki
Artykuł