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Wyszukujesz frazę "Witowski, A." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Infrared Spectroscopy of GaAs Doped with Mn
Autorzy:
Rutkowska, A.
Wasik, D.
Witowski, A.
Sadowski, M.
Orłowski, W.
Strzelecka, G.
Hruban, A.
Kamińska, M.
Twardowski, A.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2044531.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
78.20.Ls
78.30.Fs
Opis:
We found that the fine structure related to Lyman spectra of [Mn$\text{}^{2+}$(d$\text{}^{5}$) + a hole] centers in GaAs was present only for samples with low Mn concentration. Such samples, at low temperature, did not show any hopping conductance within Mn impurity band. Magnetooptical measurements revealed that magnetic field induced splitting of the Lyman optical transitions was larger than Zeeman splitting observed for typical shallow acceptors in GaAs, like Be, Zn, and C. This experimental result proved that in the case of Mn acceptor impurity, the exchange coupling of a hole and the S = 5/2 Mn$\text{}^{2+}$(d$\text{}^{5}$) core could not be neglected, which was in accordance with the [Mn$\text{}^{2+}$(d$\text{}^{5}$) + a hole] model of the neutral Mn center in GaAs.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 845-849
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Mn-Related Defect Band in InP
Autorzy:
Macieja, B.
Korona, K. P.
Piersa, M.
Witowski, A. M.
Wasik, D.
Wysmołek, A.
Strzelecka, G.
Hruban, A.
Surma, B.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2036033.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ee
72.20.Jv
Opis:
Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn$\text{}^{2+}$(d$\text{}^{5}$) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d$\text{}^{5}$ or d$\text{}^{5}$ plus a hole localized about 7Å around corresponding Mn core.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 637-642
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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