Autor: Bergman, J. P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:: Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
73.20.Dx
Opis:: We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:: Godlewski, M.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1968096.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.47.+p
78.55.Et
Opis:: A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 765-768
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
Autorzy:: Godlewski, M.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Bugajski, M.
Regiński, K.
Kaniewska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1933743.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.20.Fz
71.35.+z
Opis:: Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 719-722
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface
Autorzy:: Lundström, T.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Campman, K.
Merz, J. L.
Gossard, A. C.
Powiązania:: https://bibliotekanauki.pl/articles/1968124.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
78.60.-b
Opis:: We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al$\text{}_{0.35}$Ga$\text{}_{0.65}$As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 824-828
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy
Autorzy:: Godlewski, M.
Surma, M.
Wilamowski, Z.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1968091.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.47.+p
78.55.Et
Opis:: The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 761-764
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja