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    Wyświetlanie 1-4 z 4
    Tytuł:
    Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching
    Autorzy:
    Al-Heuseen, K.
    Hashim, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490759.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Rb
    42.79.Pw
    Opis:
    In this paper porous and as-grown GaN metal-semiconductor-metal photodiodes with Ni contact electrodes were fabricated. Structural and optical properties were studied of the both samples. Both detectors show a sharp cut-off wavelength at 370 nm, with a maximum responsivity of 0.14 A/W and 0.065 A/W achieved at 360 nm for porous GaN and as-grown metal-semiconductor-metal photodetectors, respectively. The metal-semiconductor-metal photodiode based on porous GaN shows enhanced twice magnitude of responsivity relative to the as-grown GaN metal-semiconductor-metal photodiode. Enhancement of responsivity can be attributed to the relaxation of stress and reduction of surface pit density in the porous sample. The porous sample showed a significantly low dark current at 5 V as compared to as grown sample.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 71-73
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method
    Autorzy:
    Jumidali, M.
    Hashim, M.
    Abdul Aziz, A.
    Abd Rahim, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193093.pdf
    Data publikacji:
    2015-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.10.Bk
    81.15.-z
    Opis:
    Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000°C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning electron microscopy results showed that the increase in deposition time resulted in a variation in surface morphology. Energy dispersive X-ray spectrometer analysis found that the GI samples composed of Ni element indicating the role of Ni in uniform Ge islands formation. The X-ray diffraction pattern spectra revealed that the GIs exhibited a Ge cubic structure and the intensity of Ge peaks varies with deposition time. In-plane strain indicated that the strain caused by the substrate is tensile and changed to compressive strain at the longer deposition time. The Raman spectra exhibited a red shift in the Ge-Ge peak, compared with the bulk Ge, as a result of compressive strain of the GIs. Fourier transform infrared spectrum analysis also indicated that the optical band gap Eg values of GIs can be varied by deposition time.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 4; 1068-1071
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Characterizations of~Ge Nanostructures Fabricated by~RF Magnetron Sputtering and Rapid Thermal Processing
    Autorzy:
    Abd Rahim, A.
    Hashim, M.
    Rusop, M.
    Jumidali, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490688.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    68.60.Dv
    61.46.Hk
    78.67.Bf
    61.05.C-
    Opis:
    In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge layer without Si capping (Ge/Si). Scanning electron microscopy shows that subsequent annealing in a rapid thermal processing gives uniformed Ge or SiGe islands with an estimated size of 100-500 nm. For the Ge/Si sample, under post growth annealing there had vanished the deposited Ge layer as confirmed by energy dispersive X-ray analysis. Atomic force microscopy shows that the surface roughness increases by a factor of 15.55% as the islands formed. The Raman spectrum shows that good crystalline structures of the Ge and SiGe peaks are produced. High resolution X-ray diffraction reveals cubic and tetragonal Ge phases with estimated average crystallite sizes of 42 nm and 20 nm, respectively. The results showed that it is possible to grow high quality Ge and SiGe nanostructures using a simple technique of sputtering for potential applications in photonics and high speed devices.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 16-19
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Site Preference Analysis and Ordering Characteristics of Ternary Cu0.5(Zn1–xMx)0.5 (M = Transition Metals) Alloys
    Autorzy:
    Ahmad, N.
    Ziya, A. B.
    Atiq, S.
    Saifullah, K.
    Hashim, M.
    Saleem, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/352693.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ternary alloy systems
    order-disorder transformations
    site occupancy
    ab-initio calculations
    ordering energies
    Opis:
    The site preference of some transition metals during B2-type ordering has been investigated in the ternary Cu0.5 (Zn1-x Mx )0.5 alloys with M = Ti, V, Ag, Au, Cr, Mn, Fe, Co, Ni, Nb, Mo, Hf, Ta, W, Re or Pt (x ≤ 0.01). The statistic-o-thermodynamical theory combined with the electronic theory of alloys has been used to calculate the partial ordering energies, partial short range order parameters and the order-disorder transformation temperatures. The values of partial short range order parameters have been used to determine the site preference of the metal M. The analysis shows that the metals M can be divided into two groups with regard to lattice site occupancy. One group comprising of Cr, Mn, Fe, Co, Ni, Nb, Mo, Hf, Ta, W, Re or Pt was found to prefer Zn sublattice sites, while the second group of Ti, V, Ag or Au atoms prefer Cu sublattice sites. It is found that order-disorder transformation temperature and the site preference of metal M both depend strongly on the partial ordering energies and ternary alloying addition of metal M.
    Źródło:
    Archives of Metallurgy and Materials; 2018, 63, 3; 1531-1535
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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