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Wyszukujesz frazę "Milanovic, D. D." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Charge Carrier Transport in Quantum Cascade Lasers in Strong Magnetic Field
Autorzy:
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505456.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We have developed a comprehensive rate equations based model for calculating the optical gain in the active region of a quantum cascade laser in magnetic field perpendicular to the structure layers, which takes into account all the relevant scattering channels. The model is applied to gain-optimized quantum cascade laser active region, obtained by a systematic optimization procedure based on the use of genetic algorithm, which we have previously set up for designing novel structures and improving performance of existing ones. It has proven to be very efficient in generating optimal structures which emit radiation at specified wavelengths corresponding to absorption fingerprints of particular harmful pollutants found in the atmosphere. We also illustrate another interesting prospective application of quantum cascade laser-type structures: the design of metamaterials with tunable complex permittivity, based on amplification via intersubband transitions. In this case, the role of the magnetic field is to assist the attainment of sufficient optical gain (population inversion), necessary to effectively manipulate the permittivity and fulfill the conditions for negative refraction (left-handedness).
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 99-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Precession of Quasi-Bound States in Heterostructures with Spin-Orbit Interaction
Autorzy:
Isić, G.
Indjin, D.
Ikonić, Z.
Milanović, V.
Radovanović, J.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791209.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Ej
73.20.At
73.21.Fg
Opis:
We use a finite-difference model that is capable of describing the single state spin dynamics in a double-barrier AlGaAs heterostructure. The use of Green's functions enables a description of the double-barrier structure by a finite matrix while the interaction with contacts is described by appropriate self-energies. To account for interface roughness scattering, a self-energy $Σp_{IR}$(E, k) is derived within the random phase approximation. The dominant part is due to in-plane momentum relaxation while a smaller part describing spin-flip scattering is neglected. The former only decreases the state lifetime while the latter can also affect the spin precession frequency.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 513-515
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Dynamics in Quantum Cascade Lasers
Autorzy:
Harrison, P.
Indjin, D.
Jovanović, V. D.
Mirčetić, A.
Ikonić, Z.
Kelsall, R. W.
McTavish, J.
Savić, I.
Vukmirović, N.
Milanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/2041634.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.60.-v
Opis:
A fully quantum-mechanical model for carrier scattering transport in semiconductor intersubband devices was applied to modelling of carrier dynamics in quantum cascade lasers. The standard model uses the envelope function and effective mass approximations to solve electron band structure under an applied bias. The k·p model has been employed in p-type systems where the more complex band structure requires it. The resulting wave functions are then used to evaluate all relevant carrier-phonon, carrier-carrier and alloy scattering rates from each quantised state to all others within the same and the neighbouring period. This piece of information is then used to construct a rate equation for the equilibrium carrier density in each subband and this set of coupled rate equations are solved self-consistently to obtain the carrier density in each eigenstate. The latter is a fundamental description of the device and can be used to calculate the current density and gain as a function of the applied bias and temperature, which in turn yields the threshold current and expected temperature dependence of the device characteristics. A recent extension which includes a further iteration of an energy balance equation also yields the electron (or hole) temperature over the subbands. This paper will review the method and describe its application to mid-infrared and terahertz, GaAs, GaN, and SiGe cascade laser designs.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 75-81
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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