- Tytuł:
- Review and perspective of high-k dielectrics on silicon
- Autorzy:
-
Hall, S.
Buiu, O.
Mitrovic, I. Z.
Lu, Y.
Davey, W. M. - Powiązania:
- https://bibliotekanauki.pl/articles/309000.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
high-k dielectrics
dielectric constant
hafnia
interfacial layer
aluminates
silicates - Opis:
- The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics, which are compounded by electron trapping phenomena in the microsecond regime. Nearly all practical methods of preparation result in a thin interfacial layer generally of the form SiOx or a mixed oxide between Si and the high-k so that the extraction of the dielectric constant is complicated and values must be qualified by error analysis. The discussion is initially focussed on HfO2 but recognizing the propensity for crystallization of that material at modest temperatures, we discuss and review also, hafnia silicates and aluminates which have the potential for integration into a full CMOS process. The paper is concluded with a perspective on material contenders for the "end of road map" at the 22 nm node.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 2; 33-43
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł