- Tytuł:
- DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
- Autorzy:
-
Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H. - Powiązania:
- https://bibliotekanauki.pl/articles/958103.pdf
- Data publikacji:
- 2005
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility - Opis:
- Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł