- Tytuł:
- Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
- Autorzy:
-
Syperek, M.
Ryczko, K.
Dallner, M.
Dyksik, M.
Motyka, M.
Kamp, M.
Höfling, S.
Misiewicz, J.
Sęk, G. - Powiązania:
- https://bibliotekanauki.pl/articles/1398579.pdf
- Data publikacji:
- 2016-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.21.Fg
78.47.D-
78.30.Fs
78.47.jg
78.55.Cr
78.67.De - Opis:
- Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
- Źródło:
-
Acta Physica Polonica A; 2016, 130, 5; 1224-1228
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł