Autor: Hartwig, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment
Autorzy:: Datsenko, L. I.
Misiuk, A.
Härtwig, J.
Briginets, A.
Khrupa, V. I.
Powiązania:: https://bibliotekanauki.pl/articles/1931660.pdf
Data publikacji:: 1994-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.-z
61.70.-r
Opis:: The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
Źródło:: Acta Physica Polonica A; 1994, 86, 4; 585-590
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:: Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1890764.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.70.At
61.70.-r
81.40.-z
Opis:: The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 317-320
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure
Autorzy:: Datsenko, L.
Khrupa, V.
Krasulya, S.
Misiuk, A.
Härtwig, J.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/1964116.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.-z
81.05.Cy
Opis:: The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10$\text{}^{9}$ Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 929-933
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
Autorzy:: Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E.
Powiązania:: https://bibliotekanauki.pl/articles/1945264.pdf
Data publikacji:: 1996-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.-z
65.70.+y
Opis:: AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Źródło:: Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
Autorzy:: Misiuk, A.
Härtwig, J.
Prieur, E.
Ohler, M.
Bąk-Misiuk, J.
Domagała, J.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/1964154.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Yx
81.40.Vw
61.10.-i
Opis:: The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 987-991
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources
Autorzy:: Paszkowicz, W.
Górecka, J.
Domagała, J.
Dmitruk, N.
Varshava, S. S.
Härtwig, J.
Ohler, M.
Pietraszko, A.
Powiązania:: https://bibliotekanauki.pl/articles/1964165.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Dd
68.70.+w
Opis:: GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 997-1002
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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