Autor: Witkowski, R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
Autorzy:: Witkowski, B.
Wachnicki, Ł.
Jakieła, R.
Guziewicz, E.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1492546.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Hk
77.55.hf
68.37.Hk
61.72.Ff
Opis:: Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
Autorzy:: Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1400467.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p
Opis:: The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:: Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:: https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:: The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:: Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:: https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:: We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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