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Wyszukujesz frazę "Gułkowski, S." wg kryterium: Autor


Wyświetlanie 1-6 z 6
Tytuł:
Computer implementation of mass transport in Matlab environment for modeling Epitaxial growth process with moving boundary problem
Autorzy:
Gulkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1940715.pdf
Data publikacji:
2015
Wydawca:
Politechnika Gdańska
Tematy:
moving boundary problem
computational modeling
epitaxial growth
Opis:
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experimental research is difficult and time consuming. Numerical analysis of the growth process leads to better understanding of the fundamentals of the growth process. For this reason a computational model of epitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2015, 19, 1; 15-23
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of single-diode models applied to thin film PV module operating under different environmental conditions
Autorzy:
Gulkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1940695.pdf
Data publikacji:
2017
Wydawca:
Politechnika Gdańska
Tematy:
solar energy
photovoltaics
I-V electrical characteristics
computational modeling
Opis:
The electrical current-voltage (I-V) characteristic a of photovoltaic (PV) module depends on the environmental conditions under which it operates. The shape of the I-V curve depends on the solar cell technology and changes dynamically in time with irradiance and temperature. A simulation model of the PV module can be used to examine the dynamic behavior of the I-V curve as well as to extract the module parameters from the curves. This paper presents the results of comparison of two different models based on a single-diode equivalent circuit applied to a thin film module. The Matlab/Simulink simulation studies of I-V characteristic curves in the function of irradiance and temperature were carried out. The results were compared with the experimental data of the I-V curves obtained from outdoor measurements. Relative errors of the simulation and experimental results were analyzed.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2017, 21, 1; 43-52
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of the Savitzky-Golay method for power output data set
Autorzy:
Gulkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1940714.pdf
Data publikacji:
2015
Wydawca:
Politechnika Gdańska
Tematy:
photovoltaics
solar energy
time series
PV data analysis
Opis:
The power output of a PV system changes in time during the day and strongly depends on the location and orientation of the photovoltaic module as well as on seasonal conditions. Clouds occurring during a partly cloudy day are the reason why this data is very irregular and difficult to analyze in terms of obtaining energy. The Savitzky-Golay method was applied for the power output data obtained for sunny, cloudy and partly cloudy days in order to determine the average level of power produced by a PV system at a given location. The total amount of energy was analyzed for each case.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2015, 19, 1; 25-34
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of the interface evolution during Si layer growth on a partially masked substrate
Autorzy:
Gulkowski, S.
Olchowik, J.
Cieślak, K.
Moskvin, P.
Powiązania:
https://bibliotekanauki.pl/articles/1934033.pdf
Data publikacji:
2011
Wydawca:
Politechnika Gdańska
Tematy:
epitaxial lateral overgrowth
liquid-phase epitaxial growth
computer simulations
Opis:
High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 1; 91-98
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New approach to the determination of phase equilibrium in the Zn-Te system
Autorzy:
Moskvin, P.
Olchowik, J.
Olchowik, G.
Zdyb, A.
Gulkowski, S.
Sadowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1934011.pdf
Data publikacji:
2011
Wydawca:
Politechnika Gdańska
Tematy:
phase equilibria
solubility
liquid phase epitaxy
II-VI semiconductor compound
Opis:
The polyassociative model of the liquid phase was applied to describe the phase equilibrium in the Zn-Te system. The thermodynamic functions describing the formation of liquid associates were obtained, taking into account the experimental data on the p-T-x equilibrium in the system. The model of polyassociative solutions with the parameters obtained in this work satisfactorily describes the p-T-x diagram of the system. The numerical results of the analysis of the phase equilibrium confirmed the possibility of applying the polyassociative model to the Zn-Te system in a wide temperature range.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 2; 209-217
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polyassociative model of A2B6 semiconductor melt and p-T-x phase equilibria in Zn-Cd-Te system
Autorzy:
Moskvin, P.
Antonov, M.
Olchowik, G.
Olchowik, J.
Zdyb, A.
Gulkowski, S.
Sadowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1934030.pdf
Data publikacji:
2011
Wydawca:
Politechnika Gdańska
Tematy:
phase equilibria
solubility
liquid phase epitaxy
semiconducting II-VI materials
Opis:
This work presents a numerical analysis of p-T-x phase equilibrium in the Zn-Cd-Te ternary system in the framework of the polyassociative solution model. On the basis of the experimental data on p-T-x phase equilibrium in the ternary system, thermodynamic functions describing the formation of liquid associates were found. It was shown that the results of the mixing of components in the Zn-Cd-Te ternary melt are related to the occurrence of ZnCdTe and ZnCdTe3 associates. Dissociation parameters of these complexes were calculated and subsequently used in order to efficiently describe p-T-x phase equilibrium of the system in a wide temperature range.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 1; 121-130
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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