- Tytuł:
- Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters
- Autorzy:
-
Koszel, Mikołaj
Grzejszczak, Piotr
Nowatkiewicz, Bartosz
Wolski, Kornel - Powiązania:
- https://bibliotekanauki.pl/articles/1844528.pdf
- Data publikacji:
- 2021
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
buck-boost
synchronous dc-dc converters
GaN
high efficiency
ultracapacitor
power losses
SEPIC
Ćuk - Opis:
- The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E-HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2021, 67, 3; 337-343
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł