- Tytuł:
- High temperature stability of electrical and optical properties of bulk GaN:Mg grown by HNPS method in different crystallographic directions
- Autorzy:
-
Sadovyi, B.
Amilusik, M.
Staszczak, G.
Bockowski, M.
Grzegory, I.
Porowski, S.
Konczewicz, L.
Tsybulskyi, V.
Panasyuk, M.
Rudyk, V.
Karbovnyk, I.
Kapustianyk, V.
Litwin-Staszewska, E.
Piotrzkowski, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1159722.pdf
- Data publikacji:
- 2016-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
72.80.Ey - Opis:
- Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.
- Źródło:
-
Acta Physica Polonica A; 2016, 129, 1a; A-126-A-128
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł