Autor: Kundrotas, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:: Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Powiązania:: https://bibliotekanauki.pl/articles/1505529.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.-m
71.35.-y
68.65.-k
Opis:: We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Power Microwave Detection in Asymmetrically Shaped n-Al$\text{}_{x}$Ga$\text{}_{1-x}$As Structures
Autorzy:: Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Lučun, A.
Petkun, V.
Sužiedėlis, A.
Šilėnas, A.
Powiązania:: https://bibliotekanauki.pl/articles/2041762.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
84.40.-x
72.20.Ht
Opis:: Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al$\text{}_{x}$Ga$\text{}_{1-x}$As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al$\text{}_{x}$Ga$\text{}_{1-x}$As which was monitored by photoluminescence technique.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 315-318
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
Autorzy:: Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.
Powiązania:: https://bibliotekanauki.pl/articles/1505489.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.-m
71.35.-y
71.55.Eq
Opis:: This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Mesoscopic Structures for Microwave-THz Detection
Autorzy:: Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:: Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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