Temat: 77.55.hf - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
Autorzy:: Witkowski, B.
Wachnicki, Ł.
Jakieła, R.
Guziewicz, E.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1492546.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Hk
77.55.hf
68.37.Hk
61.72.Ff
Opis:: Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
Autorzy:: Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1400467.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p
Opis:: The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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