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Wyszukujesz frazę "Perlin, P." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Light Emission Properties of GaN-Based Laser Diode Structures
    Autorzy:
    Godlewski, M.
    Phillips, M. R.
    Czernecki, R.
    Targowski, G.
    Perlin, P.
    Leszczyński, M.
    Figge, S.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043715.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.-z
    78.60.Hk
    68.37.Hk
    Opis:
    Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 675-680
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038288.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 273-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
    Autorzy:
    Ivanov, V.
    Godlewski, M.
    Miasojedovas, S.
    Juršėnas, S.
    Kazlauskas, K.
    Žukauskas, A.
    Skierbiszewski, C.
    Siekacz, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1179597.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 225-229
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
    Autorzy:
    Grzanka, S.
    Łuka, G.
    Krajewski, T. A.
    Guziewicz, E.
    Jachymek, R.
    Purgal, W.
    Wiśniewska, R.
    Sarzyńska, A.
    Bering-Staniszewska, A.
    Godlewski, M.
    Perlin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048094.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    73.40.Kp
    73.40.Lq
    Opis:
    Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 672-674
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Goldys, E. M.
    Phillips, M.
    Böttcher, T.
    Figge, S.
    Hommel, D.
    Czernecki, R.
    Prystawko, P.
    Leszczynski, M.
    Perlin, P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036870.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.Mm
    68.37.Hk
    78.60.Hk
    Opis:
    Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 689-694
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
    Autorzy:
    Godlewski, M.
    Goldys, E. M.
    Phillips, M.
    Böttcher, T.
    Figge, S.
    Hommel, D.
    Czernecki, R.
    Prystawko, P.
    Leszczynski, M.
    Perlin, P.
    Wisniewski, P.
    Suski, T.
    Bockowski, M.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035593.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.Mm
    68.37.Hk
    78.60.Hk
    Opis:
    Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 627-632
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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