Autor: Leszczyński, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Light Emission Properties of GaN-Based Laser Diode Structures
Autorzy:: Godlewski, M.
Phillips, M. R.
Czernecki, R.
Targowski, G.
Perlin, P.
Leszczyński, M.
Figge, S.
Hommel, D.
Powiązania:: https://bibliotekanauki.pl/articles/2043715.pdf
Data publikacji:: 2005-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.-z
78.60.Hk
68.37.Hk
Opis:: Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
Źródło:: Acta Physica Polonica A; 2005, 108, 4; 675-680
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
Autorzy:: Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Powiązania:: https://bibliotekanauki.pl/articles/2038288.pdf
Data publikacji:: 2004-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.45.+h
78.47.+p
78.67.De
Opis:: We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Źródło:: Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Autorzy:: Godlewski, M.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Wisniewski, P.
Suski, T.
Bockowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035593.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 627-632
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Autorzy:: Godlewski, M.
Ivanov, V. Yu.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036870.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 689-694
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
Autorzy:: Ivanov, V.
Godlewski, M.
Miasojedovas, S.
Juršėnas, S.
Kazlauskas, K.
Žukauskas, A.
Skierbiszewski, C.
Siekacz, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/1179597.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:: We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 225-229
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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