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Tytuł:
Influence of Annealing on Optical Properties of ZnO Nanorods Obtained by the Microwave-Assisted Hydrothermal Process
Autorzy:
Materska, P.
Witkowski, B.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185899.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
61.46.-w
61.72.Cc
Opis:
Optical properties of ZnO nanorods (of different sizes, grown on two different substrates) are investigated. Nanorods were grown using microwave-assisted hydrothermal process on gallium nitride or silicon substrate. To initiate nanorods growth on a silicon substrate ZnO nucleation layer was used. ZnO nanoseeds were deposited by atomic layer deposition. For GaN substrate an epitaxial relation was observed. For both substrates nanorods show a hexagonal structure, expected for wurtzite ZnO. Results of nanorods annealing are discussed.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1202-1204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Holz, P. O.
Bergman, J. P.
Monemar, B.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952469.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.47.+p
73.20.Jc
Opis:
The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1007-1011
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
73.20.Dx
Opis:
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
Autorzy:
Godlewski, M.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Bugajski, M.
Regiński, K.
Kaniewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933743.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.Fz
71.35.+z
Opis:
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 719-722
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968096.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 765-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1950749.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si
Autorzy:
Godlewski, M.
Bergman, J. P.
Monemar, B.
Rossner, U.
Barski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1950766.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
71.35.+z
78.47.+p
Opis:
Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 789-792
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Excitation and Recombination Processes in InAs$\text{}_{x}$P$\text{}_{1-x}$:Yb (x=0.04, 0.07 and 0.11)
Autorzy:
Godlewski, M.
Kozanecki, A.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1932083.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.55.Cr
71.35.+z
Opis:
Excitation and recombination mechanisms of Yb$\text{}^{3+}$ 4f-4f intra-shell emission in InP and InAsP (4, 7 and 11% of As) are analyzed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968089.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
An influence of doping level on exciton properties in n-doped multiple quantum well structures of CdTe/CdMnTe is studied for multiple quantum well structures prepared in the way that donor (indium) concentration changes within the length of the sample. We show that the formation scenario for neutral donor bound excitons in low-dimensional structures can be different from that observed in bulk samples. We further show that in the case of such quantum well structures we can selectively excite either photoluminescence emission of localized or donor bound excitons, which is a consequence of surprisingly weak energy transfer link between two types of excitonic transitions.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 757-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Surma, M.
Wilamowski, Z.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968091.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 761-764
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of CdZnSe/ZnSe Multiquantum Well System
Autorzy:
Godlewski, M.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1932081.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
71.35.+z
76.70.Hb
Opis:
Optical properties of Cd$\text{}_{x}$Zn$\text{}_{1-x}$Se/ZnSe (x = 0.12) multiquantum well system are discussed. The transient photoluminescence and optically detected cyclotron resonance experiments demonstrate a strong contribution of bound exciton emission to the low temperature photoluminescence spectra.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 209-212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected Cyclotron Resonance Studies of CdMnTe/CdTe Multiquantum Wells and CdMgTe/CdMnTe Superlattices
Autorzy:
Godlewski, M.
Świątek, K.
Harris, C. I.
Bergman, J. P.
Monemar, B.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932082.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+ρ
76.70.Hb
68.55.Ln
71.35.+z
Opis:
The results of photoluminescence, time resolved photoluminescence (decay times), optically detected cyclotron and magnetic resonances investigations of CdMnTe/CdTe multiquantum wells and CdMgTe/CdMnTe super-lattices are presented. The role of defects and quantum well width fluctuations in recombination processes of 2D carriers is discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 213-216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
Autorzy:
Godlewski, M.
Ivanov, V. Yu.
Bergman, J. P.
Monemar, B.
Barski, A.
Langer, R.
Powiązania:
https://bibliotekanauki.pl/articles/1968103.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.47.+p
Opis:
In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
Autorzy:
Godlewski, M.
Kopalko, K.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1952470.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.47.+p
78.55.Et
Opis:
Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1012-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Properties in CdTe/CdMnTe Quantum Well Structures with Strong Localization Effects
Autorzy:
Godlewski, M.
Narkowicz, R.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969075.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.55.Jv
73.20.Mf
Opis:
Strong localization effects present in quantum well structures of CdTe/ CdMnTe noticeably affect exciton dynamics and strength and character of exciton-phonon interaction. We show that the temperature dependences of the PL linewidth, PL peak wavelength and PL decay time strongly deviate from those expected for Wannier-excitons in structures with atomically smooth interfaces.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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