- Tytuł:
- Gd 4f and 5d Electrons in Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te Valence Band
- Autorzy:
-
Orłowski, B. A.
Kowalski, B. J.
Gołacki, Z.
Story, T.
Johnson, R. L. - Powiązania:
- https://bibliotekanauki.pl/articles/1933933.pdf
- Data publikacji:
- 1995-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
79.60.-i
71.20.Fi - Opis:
- The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 5; 857-860
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł