- Tytuł:
- An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
- Autorzy:
-
Tomaszewski, D.
Łukasiak, L.
Gibki, J.
Jakubowski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/308410.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance - Opis:
- An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so-called "pinch-off" region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 57-60
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł