- Tytuł:
- Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
- Autorzy:
-
Kalisz, M.
Głuszko, G.
Beck, R. B. - Powiązania:
- https://bibliotekanauki.pl/articles/308057.pdf
- Data publikacji:
- 2010
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
radio frequency reactive ion etching - Opis:
- This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2010, 1; 20-24
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł