- Tytuł:
- Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range
- Autorzy:
-
Piskorski, Ł.
Frasunkiewicz, L.
Sarzała, R. P. - Powiązania:
- https://bibliotekanauki.pl/articles/200684.pdf
- Data publikacji:
- 2015
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
strained QWs
GaInNAs
GaInAsSb
mid-infrared radiation
numerical analysis
napięte konstrukcje QWs
analiza numeryczna - Opis:
- In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.
- Źródło:
-
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 3; 597-603
0239-7528 - Pojawia się w:
- Bulletin of the Polish Academy of Sciences. Technical Sciences
- Dostawca treści:
- Biblioteka Nauki
Artykuł