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Wyszukujesz frazę "Ryczko, K." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Influence of Built-in Electric Field on Forbidden Transitions in In_xGa$\text{}_{1-x}$As/GaAs Double Quantum Well by Three-Beam Photoreflectance
Autorzy:
Sęk, G.
Ryczko, K.
Misiewicz, J.
Bayer, M.
Wang, T.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/2028844.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
78.66.-w
Opis:
Photoreflectance spectroscopy has been used to study optical transitions in In$\text{}_{0.045}$Ga$\text{}_{0.955}$As/GaAs double quantum well at 80 K. The derivative nature of this contactless electromodulation technique allows for the observation of excited state transitions in the low-dimensional structure including the symmetry-forbidden ones. Excitonic symmetry-forbidden transitions can be observed due to the effect of mixing of heavy and light hole excitons and/or due to some asymmetry in the structure. We have shown that the built-in electric field in the region of double quantum well is weak enough (less than 0.5 kV/cm) not to cause any significant energetic shift of features due to quantum confined Stark effect, on one hand. On the other hand, it is sufficient to change strongly the oscillator strength of forbidden transitions. To change the internal electric field, we have used photoreflectance in the three-beam mode with a third beam continuously illuminating the sample and causing changes of the built-in electric fields due to the photovoltage effect. This method works as a contactless forward bias and allows for a change of the field down to the flat band conditions. We have shown that changes of built-in electric field by amount of a few tenths of kV/cm can modify the intensity of forbidden transitions significantly. We show that, although the mixing of excitons is still important, a very weak built-in electric field can be dominant in the observation of forbidden excitonic transitions in double quantum well.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 417-424
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
Autorzy:
Pieczarka, M.
Podemski, P.
Musiał, A.
Ryczko, K.
Sęk, G.
Misiewicz, J.
Langer, F.
Höfling, S.
Kamp, M.
Forchel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399094.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.-b
78.67.-n
78.67.Pt
Opis:
Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 817-820
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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