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    Wyświetlanie 1-5 z 5
    Tytuł:
    Lateral Spin Diffusion Probed by Two-Color Hanle-MOKE Technique
    Autorzy:
    Quast, J.
    Astakhov, G.
    Ossau, W.
    Molenkamp, L.
    Heinrich, J.
    Höfling, S.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811976.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.25.Dc
    72.25.Fe
    85.75.-d
    72.25.Rb
    Opis:
    We report on all optical spatially resolved spin diffusion experiments in an unstrained, unbiased n-GaAs layer. Optical pump and probe intensities are varied over a wide range to study the impact of optical disturbance on spin transport. Both quantities have a considerable influence on the measured spin diffusion length and spin lifetime. Furthermore, an effective spin diffusion coefficient was obtained as a function of temperature.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1311-1316
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes
    Autorzy:
    Mrowiński, P.
    Musiał, A.
    Sęk, G.
    Misiewicz, J.
    Höfling, S.
    Somers, A.
    Hein, S.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399087.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    71.70.Gm
    78.67.Hc
    73.21.-b
    81.07.Ta
    Opis:
    The influence of confinement potential anisotropy on emission properties of strongly elongated single InAs/InGaAlAs/InP quantum dashes has been investigated by polarization-resolved microphotoluminescence spectroscopy at around 1.5 μm. There have been determined the exciton fine structure splitting, degree of linear polarization of surface emission and biexciton binding energy. The investigated dashes exhibited usually: the exciton anisotropy splitting larger than 100 μeV, the corresponding biexciton binding energy of about 3 meV, and the degree of linear polarization values in the range from 24% to 55%. Here, we presented a correlation of these parameters for several quantum dashes, which can be attributed either to a change in lateral aspect ratio within the ensemble, or the carrier localization on random fluctuations of the dash confinement potential.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 801-804
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
    Autorzy:
    Pieczarka, M.
    Podemski, P.
    Musiał, A.
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Langer, F.
    Höfling, S.
    Kamp, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399094.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    78.67.-n
    78.67.Pt
    Opis:
    Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 817-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
    Autorzy:
    Musiał, A.
    Sęk, G.
    Maryński, A.
    Podemski, P.
    Misiewicz, J.
    Löffler, A.
    Höfling, S.
    Reitzenstein, S.
    Reithmaier, J.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492876.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    65.80.-g
    Opis:
    Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 883-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Semiconductor Cavity Quantum Electrodynamics with Single Quantum Dots
    Autorzy:
    Reitzenstein, S.
    Schneider, C.
    Münch, S.
    Kistner, C.
    Strauss, M.
    Huggenberger, A.
    Franeck, P.
    Weinmann, P.
    Kamp, M.
    Höfling, S.
    Worschech, L.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791177.pdf
    Data publikacji:
    2009-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    71.35.Ji
    71.55.Eq
    37.30.+i
    Opis:
    This paper summarizes recent progress achieved in the field of semiconductor cavity quantum electrodynamics with single quantum dots with the focus being on micropillar cavities. Light-matter interaction both in the strong and weak coupling regime is presented. Resonance tuning of the quantum dot by temperature, electric fields and magnetic fields is demonstrated while the strong coupling regime can be reached. Additionally, deterministic device integration of single positioned quantum dots is reported by a combination of site controlled quantum dot growth via directed nucleation and subsequent device alignment to overcome the degree of randomness of the quantum dot position in so far most common quantum dot-cavity systems.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 4; 445-450
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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