- Tytuł:
- Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
- Autorzy:
-
Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P. - Powiązania:
- https://bibliotekanauki.pl/articles/308669.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer - Opis:
- The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł