- Tytuł:
- Influence of growth conditions of hydrogenated amorphous silicon carbide on optical properties of the interfacial layer in SiC-based photodevice
- Autorzy:
-
Kaci, S.
Keffous, A.
Bozetine, I.
Trari, M.
Fellahi, O. - Powiązania:
- https://bibliotekanauki.pl/articles/1070464.pdf
- Data publikacji:
- 2016-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.68.+m
78.66.-w
78.67.Bf
78.55.-m - Opis:
- The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission was obtained for sample whose amorphous film was deposited at 500°C. The spectral response of Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al structures with a-Si_{1-x}C_x:H film deposited at 250°C, exhibits a maximum value at λ=950 nm while for structure with a-Si_{1-x}C_x:H film obtained at 150°C, a maximum value of λ was observed at 400 nm.
- Źródło:
-
Acta Physica Polonica A; 2016, 130, 1; 463-465
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł