- Tytuł:
- Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
- Autorzy:
-
Fedotov, A.
Korolik, O.
Mazanik, A.
Kołtunowicz, T.
Żukowski, P. - Powiązania:
- https://bibliotekanauki.pl/articles/1503985.pdf
- Data publikacji:
- 2011-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.uf
81.40.Ef - Opis:
- The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 1; 108-110
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł