- Tytuł:
- Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor
- Autorzy:
-
Illarionov, Y.
Vexler, M.
Suturin, S.
Fedorov, V.
Sokolov, N. - Powiązania:
- https://bibliotekanauki.pl/articles/1490944.pdf
- Data publikacji:
- 2012-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Qv
73.40.Gk
73.61.Ng - Opis:
- Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds $10^3$ approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
- Źródło:
-
Acta Physica Polonica A; 2012, 121, 1; 158-161
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł